2SC5912 transistor equivalent, silicon npn triple diffusion mesa type power transistor.
* High breakdown voltage: VCBO ≥ 1 500 V
* Wide safe operation area
* Built-in dumper diode
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3.
or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household.
Image gallery
TAGS
Download (Size : 202.79KB)